We currently have openings for four fully funded PhD positions and three fully funded MS positions.

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The PhD positions include two starting in Fall 2026 and two in Spring 2027. The MS positions are available starting in Spring 2027. Specifically, we are recruiting two candidates with expertise in circuit design and two in semiconductor device engineering for the PhD roles; the MS positions will align with similar focus areas within the group.

 

All applicants should demonstrate a solid foundation in key concepts, including MOSFET operation, MOS capacitor behavior, and challenges associated with MOSFET scaling, such as short-channel effects, leakage currents, and performance limitations in nanoscale regimes. Please note that we are prioritizing candidates with strong backgrounds in device physics and circuit implementation, rather than materials science.

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For the circuit design positions, proficiency in both digital and analog domains is essential. This includes experience with digital design tools and methodologies, such as FPGA prototyping, Verilog/VHDL coding, and synthesis flows. In analog design, familiarity with components like low-dropout regulators (LDOs), analog-to-digital converters (ADCs), operational amplifiers, and mixed-signal integration is required.

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To apply, please email your curriculum vitae (CV) along with a concise summary of your relevant expertise and research interests. Do not use artificial intelligence tools to compose your application email.