Assistant Professor Sourav De is an IEEE Senior Member and a distinguished researcher in semiconductor memory devices, ferroelectric materials, and advanced technology integration. Currently serving at the College of Semiconductor Research, National Tsing Hua University (NTHU) since August 2024, he specializes in hafnium oxide-based ferroelectric field effect transistors (FeFETs), focusing on reliability, low-power applications, and next-generation memory solutions for AI and edge computing.

Dr. De holds a Habilitation à Diriger des Recherches from Ecole Doctorale Génie Electrique, Electronique, Télécommunications (completed December 2025), a Ph.D. in Electrical Engineering from National Cheng Kung University (2021), and a B.Tech. in Electronics and Communication Engineering (2013). His professional experience includes roles as a Scientist at National Yang-Ming Chiao Tung University (2023-2024), Research Scientist at Fraunhofer-Institut für Photonische Mikrosysteme (2021-2023), and earlier positions at National Cheng Kung University and Indian Institute of Technology Madras.

As Principal Investigator, he has secured multiple grants from agencies such as NSTC Taiwan, PSMC, and Taiwan Semiconductor Research Institute, advancing projects on ultra-thin ferroelectric hafnia, monolithic 3D memory integration, and FeFinFET development. Dr. De supervises postdoctoral fellows, Ph.D., and M.S. students, and has contributed to thesis defenses and graduations. His teaching portfolio includes courses on Semiconductor Memory, High-k Materials for CMOS Technology, and Solid State Physics. In scientific service, he serves on technical program committees for conferences like IEEE EDTM and DAC, acts as a peer reviewer for journals including Nature Communications and IEEE Electron Device Letters, and holds leadership roles in IEEE societies. Dr. De has authored over 50 publications, and is a recipient of the George E. Smith Award, with his work garnering more than 1000 citations.