2026 (4 Publications):

1. Das et al. Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing ACS Nano — Impact Factor: 16.0

2. Hsuen et al. Toward stable FeFET multi-level cell operations using novel weight freezing methodology with recovery cycling scheme for neuromorphic applications Microelectronics Reliability — Impact Factor: 1.9

3. Paul et al. WOₓ--HZO-PEALD-TiN Interface-Engineered Ferroelectric Capacitors with >2×10¹⁰ Endurance 2026 VLSI TSA (Conference — No IF)

4. Das et al. Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors ACS Applied Materials & Interfaces — Impact Factor: 8.2

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2025 (13 Publications):

1. Iung et al. Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors Applied Physics Letters — Impact Factor: 3.6

2. Sk et al. Spike-Timing Dependent Learning Dynamics in Silicon-Doped Hafnium-Oxide Based Ferroelectric Field Effect Transistors IEEE Journal of the Electron Devices Society — Impact Factor: 2.4

3. De et al. Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class Memories 2025 EDTM (Conference — No IF)

4. De et al. Hafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospects Book Chapter (Wiley — No IF)

5. Raffel et al. Defect Dynamics in Silicon-Doped HfO₂-Based Front-End-of-Line FeFETs IEEE Transactions on Electron Devices — Impact Factor: 3.2

6. Paul et al. Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing Journal of Applied Physics — Impact Factor: 2.5

7. Kumar et al. Insights into Oxygen Vacancy Effects on Ferroelectric Behavior of Hafnium Oxide: A Review physica status solidi (a) — Impact Factor: 1.9

8. Rana et al. Trapping dynamics and endurance in HfO₂-FeFETs: an insight from charge pumping IEEE Electron Device Letters — Impact Factor: 4.5

9. Senapati et al. Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory Cell Reports Physical Science — Impact Factor: 7.3

10. Das et al. Reliability of Sub-2 nm EOT FeFETs at Cryogenic Temperatures 2025 ICEE (Conference — No IF)

11. Das et al. Fundamental Insights into Trap Accumulation and Endurance Degradation in HfO2 FeFETs 2025 SISC (Conference — No IF)

12. Chaitanya et al. Adaptive FeFET-Based LIF Neuron for Regression Tasks on Spiking Neural Networks 2025 ICEE (Conference — No IF)

13. Maskeen et al. HZO based FeFET with Sub 2-nm EOT Gate Stack as Synapse for Spiking Neural Network 2025 ICEE (Conference — No IF)
     

2024 (12 Publications):

1. Cho et al. Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5Zr0.5O₂ IEEE Transactions on Electron Devices — Impact Factor: 3.2

2. Cho et al. Exploring beol-compatible ferroelectricity in ultra-thin hafnium--zirconium oxide IEEE Journal of the Electron Devices Society — Impact Factor: 2.4

3. Yin et al. A homogeneous fefet-based time-domain compute-in-memory fabric IEEE Transactions on Computer-Aided Design — Impact Factor: 2.9

4. De et al. Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors EDTM 2024 (Conference — No IF)

5. Sunil et al. Ferroelectric Field Effect Transistors--Based Content-Addressable Storage-Class Memory Advanced Intelligent Systems — Impact Factor: 6.1

(Remaining 7 papers are conference publications in EDTM, IIRW, IMW, VLSI-TSA, etc. — No IF)